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BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4)
Mechanical Data
* * * * * * * * *
SOT-23
Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate)
Drain
D
Gate
TOP VIEW
Source
G
S
Equivalent Circuit
TOP VIEW
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VDGR VGSS ID Value 60 60 20 250 Units V V V mA
Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 1)
Continuous Continuous
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 300 417 -55 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time
Notes:
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 1.0 80 Typ 80 2.0 3.5 1.0 22 11 2.0 2.0 5.0 Max 0.5 10 3.0 5.0 0.5 50 25 5.0 20 20 Unit V A nA V A mS pF pF pF ns ns Test Condition VGS = 0V, ID = 100A VDS = 25V, VGS = 0V VGS = 15V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 0.2A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VDS = 10V, VGS = 0V f = 1.0MHz
VES = 10V, RL = 150, VDS = 10V, RD = 100
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BS870
Document number: DS11302 Rev. 14 - 2
1 of 3 www.diodes.com
May 2008
(c) Diodes Incorporated
BS870
1.0 ID DRAIN-SOURCE CURRENT (A)
7 6 5 4 3 2 1 0
0.8
0.6
0.4
0.2
0
0
2 1 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics
5
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
,
0
0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 0.2
1.0
2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
70 95 -30 -5 20 45 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature
5
1.5
4
1.0
3
2
0.5
1 0
0 -55
0
2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage
400 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 5 Max Power Dissipation vs. Ambient Temperature 0 0
BS870
Document number: DS11302 Rev. 14 - 2
2 of 3 www.diodes.com
May 2008
(c) Diodes Incorporated
BS870 Ordering Information
Part Number BS870-7-F
Notes:
(Note 5) Case SOT-23 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Kxx = Product Type Marking Code, K70 or K6Z YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Date Code Key Year Code Month Code
1998 J Jan 1
1999 K Feb 2
2000 L
2001 M Mar 3
2002 N Apr 4
2003 P May 5
2004 R Jun 6
2005 S
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
Package Outline Dimensions
A
TOP VIEW
BC
G H K M
J
D
F
L
SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z G C
Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
BS870
Document number: DS11302 Rev. 14 - 2
3 of 3 www.diodes.com
May 2008
(c) Diodes Incorporated

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